Semiconductor device
文献类型：专利
| 作者 | NAKAO ICHIRO |
| 发表日期 | 1986-02-15 |
| 专利号 | JP1986032588A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor device |
| 英文摘要 | PURPOSE:To improve yield by further growing each layer for a bipolar transistor onto a stepped-section substrate type semiconductor laser. CONSTITUTION:A stepped section is formed onto an n type InP substrate 21, and an n-InP clad layer 22, an InGaAsP active layer 23 and a p-InP clad layer 24 for a laser L are shaped. An n-InP collector layer 25, a p-InGaAsP base layer 26 and an n-InP emitter layer 27 for a bipolar transistor T are formed continuously, and an electric element isolation diffusion region 28 is shaped up to the p-InP clad layer 24. Consequently, a region surrounded by the isolation diffusion region 28 and the p-InP clad layer 24 is isolated electrically, thus integrating a plurality of electric elements. A diffusion region 29 for injecting currents in the laser L is shaped up to the p-clad layer 24. Accordingly, the TS type semiconductor laser and the bipolar transistor are unified, thus simplifying a manufacturing process, then improving yield. |
| 公开日期 | 1986-02-15 |
| 申请日期 | 1984-07-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76325]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | NAKAO ICHIRO. Semiconductor device. JP1986032588A. 1986-02-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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