Semiconductor optical device
文献类型：专利
| 作者 | HASHIMOTO, JUN-ICHI |
| 发表日期 | 2011-12-06 |
| 专利号 | US8073029 |
| 著作权人 | SUMITOMO ELECTRIC INDUSTRIES, LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor optical device |
| 英文摘要 | To provide a semiconductor optical device which can restrain laser characteristics from being deteriorated by excitation in a substrate mode and can reduce the number of manufacturing steps. A semiconductor optical device comprises a first DBR layer, provided on a semiconductor substrate, having first and second semiconductor layers stacked alternately, a first cladding layer, an active layer, and a second cladding layer. The semiconductor substrate has a bandgap higher than that of the active layer. The first DBR layer is transparent to light having an emission wavelength, while the first and second semiconductor layers have respective refractive indices different from each other. Since the first DBR layer is thus provided between the semiconductor substrate and first cladding layer, the guided light reaching the lower end of the first cladding layer, if any, is reflected by the first DBR layer, whereby light can be restrained from leaking to the semiconductor substrate. This can avoid the substrate-mode excitation, thereby suppressing its resulting laser characteristic deteriorations such as destabilization of oscillation wavelengths. |
| 公开日期 | 2011-12-06 |
| 申请日期 | 2009-01-26 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76328]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SUMITOMO ELECTRIC INDUSTRIES, LTD. |
| 推荐引用方式 GB/T 7714 | HASHIMOTO, JUN-ICHI. Semiconductor optical device. US8073029. 2011-12-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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