Semiconductor laser device
文献类型：专利
| 作者 | HIRONAKA MISAO |
| 发表日期 | 1991-03-04 |
| 专利号 | JP1991049289A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To make it possible to improve the controllability of etching and yield and to reduce cost by installing a specified cladding layer on a second cladding layer and forming a stripe-shaped recessed part so that said etching performance may come to a halt on said second cladding layer. CONSTITUTION:This device is designed to minimize irregularity in the thickness of a second cladding layer 4 by providing a third cladding layer on the second cladding layer 4. At first, a cladding layer 2 is formed on a substrate 1, then, an active layer 3 and the cladding layer 4 are formed based on the prior art method. Furthermore, a layer is consecutively laminated to form a film so that they may match with the layer 4. Then, a silicone nitriding film is formed on the layer 20 so that a stripe-shaped silicone nitride film 10 may be formed by photolithography. Then, the layer 10 is used as a mask to etch the layer 20 with KOH for example. The cladding layer 4 is not etched against etchant during this etching operation. Therefore, the etching operation comes to a halt if the thickness is t so that a stripe-shaped recessed part 21 may be formed. Then, after an electric current blocking layer 6 is formed on the layer 4 which excludes the recessed part 21, the film 10 is removed and a contact layer 7 is formed on the layer 6 and the recessed part 2 |
| 公开日期 | 1991-03-04 |
| 申请日期 | 1989-07-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76344]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | HIRONAKA MISAO. Semiconductor laser device. JP1991049289A. 1991-03-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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