Semiconductor light emitting device
文献类型：专利
| 作者 | KAMITE KIYOTSUGU |
| 发表日期 | 1986-01-09 |
| 专利号 | JP1986003488A |
| 著作权人 | FUJITSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting device |
| 英文摘要 | PURPOSE:To prevent the deterioration of noise characteristics by a method wherein a saturable absorber whereby the amount of light absorption becomes saturated with the light intensity of more than a required value is provided in the middle between a resonator end surface and an active end. CONSTITUTION:Zn diffusion is carried out so that the active layer 3 in a semi- circular cylindrical region 7 may come to a carrier concentration of 5X10cm in the active region converted to P type. A saturable absorber region 8 is produced by diffusing Zn to the lower end of the active layer 3 or to a depth below it at a concentration equal to that of the diffusion for the region 7 or larger than it. Otherwise, the region 8 can be formed by diffusing Cu, Sn or Te instead of Zn. The laser beam oscillated in the active layer 3 located in the region 7 is emitted horizontally in a left direction. In this case, the emitted beam has a large light intensity and is therefore not absorbed to the region 8, but mostly passes through. Reversely, the return beam from outside has a much smaller light intensity than the emitted beam, and is therefore absorbed to the region 8, accordingly, the noise characteristic does not deteriorate. |
| 公开日期 | 1986-01-09 |
| 申请日期 | 1984-06-15 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76352]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU KK |
| 推荐引用方式 GB/T 7714 | KAMITE KIYOTSUGU. Semiconductor light emitting device. JP1986003488A. 1986-01-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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