Semiconductor light emitting device
文献类型：专利
| 作者 | OOSAKA SHIGEO; YOSHIDA KATSUJI |
| 发表日期 | 1985-05-20 |
| 专利号 | JP1985089991A |
| 著作权人 | FUJITSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting device |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser which can obtain an output having large sole basic zero-order lateral mode by forming a region that the refractive index difference is increased by injecting carrier in contact with the stripe region of an active layer. CONSTITUTION:Holes are implanted from the first clad layer 12 side of P type of P-N junction formed in the boundary between the first clad layer 12 and the active layer 13 to the active layer 13 side of N type to reduce the refractive index of this portion. As a result, the refractive index distribution of the stripe width direction of the layer 13 becomes the state that the P type region 17 (A in the drawing) having large refractive index is interposed by the regions (B in the drawing) having small refractive index as compared with the original refractive index (C in the drawing), and a guiding having large refractive index difference is formed in the stripe region of the layer 13. Thus, a semiconductor laser having high output in the sole basic zero-order lateral mode can be obtained. |
| 公开日期 | 1985-05-20 |
| 申请日期 | 1983-10-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76360]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU KK |
| 推荐引用方式 GB/T 7714 | OOSAKA SHIGEO,YOSHIDA KATSUJI. Semiconductor light emitting device. JP1985089991A. 1985-05-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。