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文献类型：专利
| 作者 | NOGUCHI ETSUO; NAGAI HARUO |
| 发表日期 | 1988-11-01 |
| 专利号 | JP1988055233B2 |
| 著作权人 | NIPPON TELEGRAPH & TELEPHONE |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To manufacture a semiconductor laser having periodic structure easily by forming a semiconductor layer for protection on the irregular surface of a semiconductor substrate at a temperature, where the irregular surface is not deformed, or less. CONSTITUTION:The surface of a semiconductor substrate 1 is formed in an irregular surface 2. A semiconductor layer 30 for protection consisting of a semiconductor material different from the substrate 1 is shaped on the surface 2 at a temperature, where the surface 2 is not deformed, or less. The layer 30 is removed from the upper section of the surface 2 through meltback, the surface 2 is exposed, and semiconductor layers 3-6 are laminated and formed on the surface 2 in succession in this order through a liquid-phase epitaxial growth method. According to such a manufacture, a semiconductor laser having periodic structure can be manufactured by an extremely simple process. According to the manufacture, the irregular surface of the substrate 1 is not deformed through the whole processes. |
| 公开日期 | 1988-11-01 |
| 申请日期 | 1983-12-22 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76363]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON TELEGRAPH & TELEPHONE |
| 推荐引用方式 GB/T 7714 | NOGUCHI ETSUO,NAGAI HARUO. -. JP1988055233B2. 1988-11-01. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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