Manufacture of semiconductor laser device
文献类型：专利
| 作者 | NIDOU MASAAKI; SAKUMA ISAMU |
| 发表日期 | 1985-08-23 |
| 专利号 | JP1985161688A |
| 著作权人 | NIPPON DENKI KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser device |
| 英文摘要 | PURPOSE:To provide a semiconductor laser device which has high mass productivity and makes possible to do high light-output operation, by including a second vapor phase epitaxy process which forms a fifth semiconductor layer of a second conductive type having a larger band gap than the active layer on substrate crystal with a groove formed. CONSTITUTION:A mask for etching which has windows aligned in the direction is formed on the surface of the N type GaAs layer 5, and a concave 13 reaching the N type Al0.35Ga0.65As layer 2 is formed by means of etching. Next, a mask 14 for etching which has belt-form windows 15 formed so as to connect the windows 12, is formed. To form a groove 16, the N type GaAs layer 5 is selectively removed with etching. Next, a P type Al0.35Ga0.65As layer 7 is formed as a fifth semiconductor layer having a larger band gap than the active layer 3, and thereon a P type GaAs layer 8 is formed. Thereafter, a P type electrode 9 and an N type electrode 10 are formed. Lastly, it is cut into discrete chips on the cutting line passing through the center of the windows 12 perpendicular to the direction to complete a semiconductor laser device. |
| 公开日期 | 1985-08-23 |
| 申请日期 | 1984-02-02 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76367]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON DENKI KK |
| 推荐引用方式 GB/T 7714 | NIDOU MASAAKI,SAKUMA ISAMU. Manufacture of semiconductor laser device. JP1985161688A. 1985-08-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。