Semiconductor light emitting device
文献类型：专利
| 作者 | SHIMA KATSUTO; OOSAKA SHIGEO; HANAMITSU KIYOSHI; SEKI KATSUJI |
| 发表日期 | 1983-07-12 |
| 专利号 | JP1983116785A |
| 著作权人 | FUJITSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting device |
| 英文摘要 | PURPOSE:To enable effective implantation of carrier and to preferably stabilize a mode by diffusing p type impurity of high density in a compound semiconductor substrate and forming a p-n homojunction and heterojunction in 3 directions in an active layer. CONSTITUTION:A p type Ga1-xAlxAs clad layer 12, a Ga1-zAlzAs guide layer 13, an n type Ga1-yAlyAs active layer 14, an n type Ga1-xAlxAs clad layer 15 and an n type GaAs cap layer 16 are formed on a p type GaAs semiconductor substrate 11, a stripe part 20 remains, and a p type region 18 which reaches the layer 12 is formed by diffusing Zn. Holes are implanted from 3 directions of a homojunction produced by forming a p type region 19 and a heterojunction which is produced between the layers 13 or 12 in the active region 14A in the stripe part 20, thereby causing the current to flow only through the region 14A. |
| 公开日期 | 1983-07-12 |
| 申请日期 | 1981-12-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76370]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU KK |
| 推荐引用方式 GB/T 7714 | SHIMA KATSUTO,OOSAKA SHIGEO,HANAMITSU KIYOSHI,et al. Semiconductor light emitting device. JP1983116785A. 1983-07-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。