Semiconductor laser
文献类型：专利
| 作者 | ASAI AKIHIKO; MAKITA KATSUO; HANAMITSU YUKIKAZU; TSUCHIYA TOSHIO; YAMAGUCHI SHIGEMI |
| 发表日期 | 1988-08-25 |
| 专利号 | JP1988205980A |
| 著作权人 | アンリツ株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To lower a threshold electric current by a method wherein a mesa stripe composed of an inverted-mesa-shaped part, a vertical-shaped part and a forward-mesa-shaped part in succession is formed on a multilayer-film structure wafer which is formed by piling up semiconductor layers including an active layer. CONSTITUTION:A p-type InP clad layer 12, an n-type In1-xGaxAs1-yPy active layer 13 and an n-type InP clad layer 14 are grown in succession on a p-type InP substrate 1; after that, a belt-shaped insulating film 23 is formed. Then, an inverted-mesa-shaped part 20 is formed by a first etching process; a vertical- shaped part 21 and a forward-mesa-shaped part 22 are formed by a second etching process; after that, a p-type InP buried layer 15, an n-type InP buried layer 16 and a p-type InP buried layer 17 are grown in succession. The insulating layer 23 is removed, and an n-type electrode 18 and a p-type electrode 19 are formed. By this setup, because the active layer 13 can be made narrow, it is possible to stabilize an oscillation mode of a laser beam and to lower a threshold electric current. |
| 公开日期 | 1988-08-25 |
| 申请日期 | 1987-02-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76374]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | アンリツ株式会社 |
| 推荐引用方式 GB/T 7714 | ASAI AKIHIKO,MAKITA KATSUO,HANAMITSU YUKIKAZU,et al. Semiconductor laser. JP1988205980A. 1988-08-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。