Semiconductor laser
文献类型：专利
| 作者 | IKEDA MASAHIRO; OKU SATORU; SHIBATA YASUO; KATO HARUSHIGE |
| 发表日期 | 1992-02-25 |
| 专利号 | JP1992057380A |
| 著作权人 | 日本電信電話株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To enable TE waves and TM waves to be emitted on the same substrate by a method wherein a polarization selective reflection slot is entered in the optical path of a resonator. CONSTITUTION:A p-type clad layer 1, an n-type clad layer 2 and a polarization selective slot 3 are provided. In this case, the slot 3 tilted by 17 deg. in the section is illustrated. The reflection slot 3 oscillating as TM waves can be formed by reactive ion beam etching process with a substrate tilted by 17 deg. Through these procedures, TE waves and TM waves can be separated by forming the reaction slot 3 so that the reaction may be made weaker to the TM waves of the normal Fabry-Perot type semiconductor laser while stronger to the TE waves. |
| 公开日期 | 1992-02-25 |
| 申请日期 | 1990-06-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76385]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 日本電信電話株式会社 |
| 推荐引用方式 GB/T 7714 | IKEDA MASAHIRO,OKU SATORU,SHIBATA YASUO,et al. Semiconductor laser. JP1992057380A. 1992-02-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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