Semiconductor laser and its manufacture
文献类型：专利
| 作者 | ONAKA SEIJI; MORI YOSHIHIRO |
| 发表日期 | 1991-08-28 |
| 专利号 | JP1991196688A |
| 著作权人 | 松下電器産業株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser and its manufacture |
| 英文摘要 | PURPOSE:To reduce an oscillation threshold value by forming a confinement layer of n-type AlInP, AlGaInP or AlGaAs whose refractive index is lower than that of a p-type AlGaInP clad layer on a surface of the p-type AlGaInP clad layer at both sides of a stripe. CONSTITUTION:An n-type AlInP confinement layer 105 whose refractive index is lower than that of a p-type AlGaInP clad layer 104 is formed on a surface of the p-type AlGaInP clad layer 104 at both sides of a stripe 10. Since the refractive index of an n-type AlInP clad layer 102 is lower than that of the p-type AlGaInP clad layer 104, light oozes largely to the side of the p-type AlGaInP clad layer 104; therefore, it is possible to confine and wave-guide light effectively also in a direction parallel to an active layer 103 by the n-type AlInP confinement layer 105 whose refractive index is smaller than that of the AlGaInP clad layer 104 provided to both sides of the stripe. Thereby, an oscillation threshold value can be reduced. |
| 公开日期 | 1991-08-28 |
| 申请日期 | 1989-12-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76396]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 松下電器産業株式会社 |
| 推荐引用方式 GB/T 7714 | ONAKA SEIJI,MORI YOSHIHIRO. Semiconductor laser and its manufacture. JP1991196688A. 1991-08-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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