Semiconductor laser device
文献类型：专利
| 作者 | SHONO, MASAYUKI; HIROYAMA, RYOJI; YODOSHI, KEIICHI |
| 发表日期 | 1996-09-24 |
| 专利号 | US5559818 |
| 著作权人 | SANYO ELECTRIC CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | The present invention is directed to a semiconductor laser device in which an active layer is constituted by a quantum well layer having a structure in which well layers and barrier layers which are formed on a GaAs substrate are alternately layered, cladding layers are provided so as to interpose the active layer, the value of a strain on each of the well layers is -0.8% to -5%, the thickness of a well layer is from 80 ANGSTROM to 180 ANGSTROM , the value of strain on each of the barrier layers is +0.5% to +0%, the thickness of the barrier layer is 20 ANGSTROM to 60 ANGSTROM , and the respective numbers of layered well layers and barrier layers are 2 to 4. |
| 公开日期 | 1996-09-24 |
| 申请日期 | 1994-09-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76400]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SANYO ELECTRIC CO., LTD. |
| 推荐引用方式 GB/T 7714 | SHONO, MASAYUKI,HIROYAMA, RYOJI,YODOSHI, KEIICHI. Semiconductor laser device. US5559818. 1996-09-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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