Semiconductor laser element
文献类型：专利
| 作者 | YAMAMOTO SABUROU; HAYASHI HIROSHI; MORIMOTO TAIJI; YANO MORICHIKA |
| 发表日期 | 1985-11-11 |
| 专利号 | JP1985226191A |
| 著作权人 | SHARP KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser element which has an advantage of having no low Ith, height no and astigmatism, by a method wherein effective refractive index difference DELTAn and loss difference DELTAalpha at the inside and outside of a base plate groove are controlled independently. CONSTITUTION:At the outside of V type groove 19, the light strength distribution becomes non-contrastive vertically as if pushed in the direction of an n-clad layer 15 by the presence of a layer 20 (low refraction ratio) having larger AlAs molar ratio than a p-clad layer 13, and the effective refraction ratio is lowered. As a result, a refraction ratio guide wave route is formed on a groove 19. The light absorbing condition to an electric current inhibition layer 12 at the outside of the groove 19 can be changed by the width of the layer 20 and AlAs molar ratio (z). Accordingly, DELTAn and DELTAalpha can be controlled independently, and it will be possible to make large DELTAn and small DELTAalpha. |
| 公开日期 | 1985-11-11 |
| 申请日期 | 1984-04-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76404]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KK |
| 推荐引用方式 GB/T 7714 | YAMAMOTO SABUROU,HAYASHI HIROSHI,MORIMOTO TAIJI,et al. Semiconductor laser element. JP1985226191A. 1985-11-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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