Semiconductor device
文献类型：专利
| 作者 | YAGI TETSUYA; HIRONAKA MISAO; YOSHIDA KAZUTOMI |
| 发表日期 | 1990-09-21 |
| 专利号 | JP1990239678A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor device |
| 英文摘要 | PURPOSE:To prevent deterioration of the reliability by providing a metal layer being thicker than the height of a stripelike protrusion just above an active region, on a region other than the stripelike protrusion. CONSTITUTION:A metal layer 13 being thicker than the height of a stripelike protrusion 8 just above an active region is provided on a region other than the stripelike protrusion 8. Accordingly, the stripelike protrusion 8 just above a laser oscillation region does not come to touch a heat sink 14 directly and no stress is applied to the laser oscillation region, as the height of the metal layer 13 is higher than that of the stripelike protrusion 8 in the case of assembly by a junction-down method. This makes it possible to prevent deterioration of the reliability caused by assembly. |
| 公开日期 | 1990-09-21 |
| 申请日期 | 1989-03-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76408]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | YAGI TETSUYA,HIRONAKA MISAO,YOSHIDA KAZUTOMI. Semiconductor device. JP1990239678A. 1990-09-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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