Manufacture of semiconductor laser device
文献类型：专利
| 作者 | YOSHIKAWA AKIO; KAZUMURA MASARU |
| 发表日期 | 1985-12-20 |
| 专利号 | JP1985258990A |
| 著作权人 | MATSUSHITA DENKI SANGYO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser device |
| 英文摘要 | PURPOSE:To easily form the stripe structure for strong current stricture by a method wherein a multilayer thin film including a double hereto structure is formed on a substrate having a forward mesa stepwise difference by the method of organic metal vapor phase growth. CONSTITUTION:A stepwise difference is formed on the 100-plane of an n type GaAs substrate 10 in parallel with the direction by photolithography. Next, a n type Ga1-xAlxAs clad layer 11, a Ga1-yAlyAs clad layer 11, a Ga1-y AlyAs active layer 12, a p type Ga1-xAlxAs clad layer 13, and an n type GaAs current block layer 14 are formed by the MOCVD method (organic metal vapor phase growth method). Thereafter, Zn is so diffused as to reach the p type Ga1-x AlxAs clad layer 13, thus forming a stripe. |
| 公开日期 | 1985-12-20 |
| 申请日期 | 1984-06-06 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76410]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA DENKI SANGYO KK |
| 推荐引用方式 GB/T 7714 | YOSHIKAWA AKIO,KAZUMURA MASARU. Manufacture of semiconductor laser device. JP1985258990A. 1985-12-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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