Semiconductor light emitting device
文献类型：专利
| 作者 | NISHITANI YORIMITSU |
| 发表日期 | 1985-01-26 |
| 专利号 | JP1985015984A |
| 著作权人 | FUJITSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting device |
| 英文摘要 | PURPOSE:To form the active layer even and to generate the output light with a stable mode by arranging the stripe-form groove where (111) plane of the second semiconductor layer and (100) plane of the first semiconductor layer are exposed and the double hetero structure. CONSTITUTION:On the N type InP substrate 11, an N type InGaAsP layer 12 and a P type InP layer 13 are grown. On the InP layer 13, a mask is formed by using SiO2 followed by selective etching of the P type InP layer 13 to form the groove 14 whose cross section is an inverted trapezoid. In the groove 14, an N type InP second clad layer 17 are LPE-grown in order and on the InP second clad layer 17, a P type InGaAsP contact layer 18 is LPE-grown. On this semiconductor substrate, a protective insulating film 19, a P-side electrode 20 and an N-side electrode 21 are formed followed by cleavage and etc. to form the semiconductor light emitting element. |
| 公开日期 | 1985-01-26 |
| 申请日期 | 1983-07-06 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76414]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU KK |
| 推荐引用方式 GB/T 7714 | NISHITANI YORIMITSU. Semiconductor light emitting device. JP1985015984A. 1985-01-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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