Semiconductor laser and manufacture thereof
文献类型：专利
| 作者 | UENO YOSHIYASU |
| 发表日期 | 1991-04-15 |
| 专利号 | JP1991089585A |
| 著作权人 | 日本電気株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser and manufacture thereof |
| 英文摘要 | PURPOSE:To improve COD level by providing a resonator having a pair of cleavage planes perpendicular to the laminating plane in a multilayer film structure including a double hetero-structure of a GaInP active layer and an AlGaInP clad layer and substituting phosphorus atoms in and in the vicinity of the surface of this cleavage plane by nitrogen atoms. CONSTITUTION:In conventional laser structure, an active layer in the vicinity of a cleavage plane has no contribution to light emission and inversely serves as a light absorbing layer and generates heat and makes the main caused of COD. This phenomenon is caused by the fact that the band gap energy is substantially decreased due to the high density surface levels in the vicinity of the cleavage end plane 7. Therefore, P N substitution region 6 is provided in the vicinity of the cleavage end plane 7. The band gap energy of GaInN is sufficiently larger as compared with GaInP so that the band gap energy of the active layer in the vicinity of the end plane is made larger than the laser generated light energy and light absorption at the laser end surface is suppressed and COD light density can be improved. |
| 公开日期 | 1991-04-15 |
| 申请日期 | 1989-08-31 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76416]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 日本電気株式会社 |
| 推荐引用方式 GB/T 7714 | UENO YOSHIYASU. Semiconductor laser and manufacture thereof. JP1991089585A. 1991-04-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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