Semiconductor laser
文献类型：专利
| 作者 | NIDOU MASAAKI; ISHIKAWA MAKOTO |
| 发表日期 | 1991-02-26 |
| 专利号 | JP1991044990A |
| 著作权人 | 日本電気株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser which has a low oscillation threshold and is capable of operating even at a high temperature by specifying a material which forms a specified differential energy and energy barrier on a clad layer which faces an active layer. CONSTITUTION:In a semiconductor laser under a double hetero structure including an AlxGa1-xAs active layer 4, and p-type clad layer 5 and n-type clad layer 3 which faces the active layer 4 and has a band gap larger than that, the p-type clad layer 5 is formed with AlyGa1-yAs (Y>X) while the n-type clad layer 3 is formed with (AlzGa1-z)0.51In0.49P. Under this structure, the differential energy against electrons and holes from the band end of the active layer 4, when it is injected, is reduced while the energy barrier is increased when it is overflowing. It is, therefore, possible to reduce oscillation threshold and carry out high temperature performance as well. |
| 公开日期 | 1991-02-26 |
| 申请日期 | 1989-07-12 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76418]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 日本電気株式会社 |
| 推荐引用方式 GB/T 7714 | NIDOU MASAAKI,ISHIKAWA MAKOTO. Semiconductor laser. JP1991044990A. 1991-02-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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