半導体装置の製造方法
文献类型：专利
| 作者 | 岡崎 二郎 |
| 发表日期 | 1999-04-30 |
| 专利号 | JP2921925B2 |
| 著作权人 | 富士通株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体装置の製造方法 |
| 英文摘要 | PURPOSE:To prevent leakage without fail by laminating an upper stage part having narrower width than a mesa lower stage part on the mesa lower stage part to form a mesa having a stepped width, and leaving an n type InP layer only on the mesa lower stage part and removing the same of a part other than the left part. CONSTITUTION:A lower substrate 10 is formed by covering a P type InP substrate with an active layer 9, and thereafter a striped mask layer 5 is formed. There is formed a mesa 6 of a narrower width than a mesa lower stage part 2 on the just-mentioned part 2 by etching the cladding layer 4, the active layer 3, and the contact layer 9 using an etching solution of a smaller side etching rate. Then, opposite side regions of the mesa 6 on the lower substrate 10 is buried with an n type InP layer 7 up to the lower end of the striped mask layer 5, and the n type InP layer 7 is etched with part of the n type InP layer 7 left behind on the lower substrate 1 on opposite sides of a protrusion part 2 and with the other part of the n type InP layer 7 being removed. Further, the opposite side regions of the mesa 6 on the lower substrate 10 is buried with a high resistance i type InP layer 8 up to the lower end of the striped mask 5. |
| 公开日期 | 1999-07-19 |
| 申请日期 | 1990-06-01 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76430]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 富士通株式会社 |
| 推荐引用方式 GB/T 7714 | 岡崎 二郎. 半導体装置の製造方法. JP2921925B2. 1999-04-30. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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