Semiconductor device and its manufacture
文献类型：专利
| 作者 | YASUAMI SHIGERU |
| 发表日期 | 1992-02-14 |
| 专利号 | JP1992045577A |
| 著作权人 | TOSHIBA CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor device and its manufacture |
| 英文摘要 | PURPOSE:To set polycrystal or an amorphous region arbitrarily in a lamination which is acquired by epitaxial growth by providing a second semiconductor layer which is formed including a semiconductor layer whose lattice constant is different from that of a semiconductor layer. CONSTITUTION:Conventional surface pretreatment is performed for a silicon substrate 3 Fixing of dangling bond is performed for a region 32 wherein polycrystal is made to grow by a substance of low surface activity such as oxygen atom using STM. Thereafter, a thin film wherein a single crystal region 33a and a polycrystal region 33b coexist can be acquired by forming silicon by use of silane. A realized region of single crystal 33a and polycrystal 33b is arranged periodically two-dimensionally or three-dimensionally. |
| 公开日期 | 1992-02-14 |
| 申请日期 | 1990-06-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76437]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOSHIBA CORP |
| 推荐引用方式 GB/T 7714 | YASUAMI SHIGERU. Semiconductor device and its manufacture. JP1992045577A. 1992-02-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。