Semiconductor laser
文献类型：专利
| 作者 | OTAKI KANAME |
| 发表日期 | 1991-08-28 |
| 专利号 | JP1991196591A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To make it possible to obtain a high output light having no astigma tism by providing a multiple quantum well(MQW) optical waveguide in the vicinity of a laser light emission edge. CONSTITUTION:A stripe shaped groove 12 is formed by etching an N-type GaAs contact layer 6 by a depth corresponding to the thickness of an N-type AlGaAs upper-side clad layer 4. Next, Zn diffusion is applied to the stripe-shaped groove 12 and to the vicinity of a laser light emission end face by a vapor diffusion method with an SiNx film used as a mask so that a diffusion front from the stripe groove 12 reaches an N-type GaAs active layer 3, whereby a GaAs active region 8 transformed into a P type is formed. By providing beforehand the stripe-shaped groove 12 for forming the P-type active region 8 to be a laser oscillation region, in this way, an MQW optical waveguide 10 can be formed in the vicinity of the laser light emission end face on the occasion of the Zn diffusion of a diffusion stripe. According to this constitution, a laser light having no astigmatism can be obtained. |
| 公开日期 | 1991-08-28 |
| 申请日期 | 1989-12-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76447]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | OTAKI KANAME. Semiconductor laser. JP1991196591A. 1991-08-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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