Manufacture of semiconductor laser
文献类型：专利
| 作者 | SAKAKIBARA YASUSHI; GOTO KATSUHIKO; OKURA YUJI; SHIBA TETSUO |
| 发表日期 | 1990-04-19 |
| 专利号 | JP1990106988A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To control the width of an active region stably, and to enable stable fundamental transverse mode operation and low threshold oscillation by forming the active region to the lower section of a mesa through self-alignment and controlling the width of the active region by the width and height of the mesa, a distance from an active layer to the mesa and the incident angle of ion beams. CONSTITUTION:The ions of a p-type impurity are implanted to one side face of a mesa 6 from an oblique section to shape a p-type region 7, and the ions of an n-type impurity are implanted to the other side face of the mesa 6 from an oblique section on the reverse side to form an n-type region 8. Since a mask 5 and the mesa 6 function as the mask of self-alignment to ion implantation for forming an active region 11 in narrow width at that time, the width and height of the mesa 6, the thickness of a second clad layer it and an incident angle of ion beams to a wafer are controlled, thus stably controlling the width of the active region 11 so that a transverse mode is brought to a single mode. |
| 公开日期 | 1990-04-19 |
| 申请日期 | 1988-10-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76453]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | SAKAKIBARA YASUSHI,GOTO KATSUHIKO,OKURA YUJI,et al. Manufacture of semiconductor laser. JP1990106988A. 1990-04-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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