Manufacture of semiconductor laser device
文献类型：专利
| 作者 | KAKIMOTO SHIYOUICHI; SOGOU TOSHIO; TAKAMIYA SABUROU; NITSUTA SHIGEYUKI |
| 发表日期 | 1983-03-11 |
| 专利号 | JP1983042285A |
| 著作权人 | MITSUBISHI DENKI KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser device |
| 英文摘要 | PURPOSE:To contrive improvement in reliability of adhesive property for the titled device by a method wherein a metal block, which will be turned to a heat radiating substance, and a laser element are adhered through the intermediary of an Si block whereon a metal layer having affinity for alloy solder material and a metal layer, having little surface rediation when it is alloyed, are coated on both sides. CONSTITUTION:The first metal layer 8 containing W, the second metal layer 9 consisting of gold, the third metal layer 10 of Ge, and the fourth metal layer 11 consisting of gold are formed in deposition on the front and back sides of an Si substrate 2. When Si submount 2 and a laser diode element 1 are successively placed on the metal block 3, which will be turned to a heat-resisting substrate with gold coating on the surface, and the above is maintained at the eutectic temperature of gold and Ge or above, said three metal layers are adhered each other by gold and Ge alloyed solder material 12, thereby enabling to obain the uniform adhesion having small thermal resistance. |
| 公开日期 | 1983-03-11 |
| 申请日期 | 1981-09-07 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76469]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KK |
| 推荐引用方式 GB/T 7714 | KAKIMOTO SHIYOUICHI,SOGOU TOSHIO,TAKAMIYA SABUROU,et al. Manufacture of semiconductor laser device. JP1983042285A. 1983-03-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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