半導体レーザの製造方法
文献类型：专利
| 作者 | 冨永 浩司; 吉年 慶一; 山口 隆夫 |
| 发表日期 | 1997-08-15 |
| 专利号 | JP2686133B2 |
| 著作权人 | 三洋電機株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レーザの製造方法 |
| 英文摘要 | PURPOSE:To make both low-output and high-output oscillations possible by a method wherein a low-position surface and a high-position surface are divided by the ridge, first and second grooves going through the current conflicting layer formed on these surfaces are formed respectively and a double heterostructure layer is formed by growth on the current conflicting layer. CONSTITUTION:A ridge 21 is provided on the surface of a p-type GaAs substrate 20 for dividing into a surface 22 of a low position and a surface 23 of a high position while a first groove 25 and a second groove 26 going through a current contraction layer 24 formed on the surface of the substrate 20 are formed on the low position surface 22 and the high position surface 23 respectively. Including the grooves 25 and 26, a cap layer 31 consisting of a double heterostructure layer 27 and n-type GaAs is formed in order by a liquid phase epitaxial method. Growth speed on the high position surface is slow and the thickness of each layer constituting the double heterostructure layer 27 is large on the low position surface 22 while being small on the high level surface 23. Thereby, the first laser part of low output and the second laser part of high output constituting a monolithic type laser are simultaneously formed by the same growth process so as to be able to attain high output and a multimode operation. |
| 公开日期 | 1997-12-08 |
| 申请日期 | 1989-03-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76476]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 三洋電機株式会社 |
| 推荐引用方式 GB/T 7714 | 冨永 浩司,吉年 慶一,山口 隆夫. 半導体レーザの製造方法. JP2686133B2. 1997-08-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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