Semiconductor light emitting device
文献类型：专利
| 作者 | USHIJIMA ICHIROU; TANAHASHI TOSHIYUKI; NAKAI SABUROU |
| 发表日期 | 1984-02-02 |
| 专利号 | JP1984021079A |
| 著作权人 | FUJITSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting device |
| 英文摘要 | PURPOSE:To contrive to alleviate the increase of temperature and to change a device into long lifetime one while interrupting leakage current and improving the characteristic of current-photo output by a method wherein the curvature of the surface of a semiconductor layer formed before an active layer is formed is reduced. CONSTITUTION:A P type InP layer 12 is formed on the surface of an N type InP substrare 11, Next, a groove having a V-section which reaches the N type InP substrate 11 through the P type InP layer 12 and then extends in the direction of crystal is formed. An N type InP first closed layer 13 is lamination-formed to a thickness whereby the upper surface reaches the P type InP layer 12, next an N type InGaAsP semiconductor layer 14, and further the non- doped InGaAsP active layer 15 are lamination-formed in this V-groove by liquid epitaxial growing method. A P type InP second closed layer 16 and a P type InGaAsP cap layer 17 which extend from the inside of the groove over the entire surface of the bulk are lamination-formed by further liquid epitaxial growing method. A semiconductor laser element is completed by arranging a P-side electrode 18 and an N-side electrode 19 and performing cleavage. |
| 公开日期 | 1984-02-02 |
| 申请日期 | 1982-07-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76485]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU KK |
| 推荐引用方式 GB/T 7714 | USHIJIMA ICHIROU,TANAHASHI TOSHIYUKI,NAKAI SABUROU. Semiconductor light emitting device. JP1984021079A. 1984-02-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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