Photosemiconductor device
文献类型：专利
| 作者 | ITO MASATAKA; AKUMI TAKEHIKO |
| 发表日期 | 1986-12-17 |
| 专利号 | JP1986287264A |
| 著作权人 | TOSHIBA CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Photosemiconductor device |
| 英文摘要 | PURPOSE:To optimally couple readily a semiconductor laser with photowaveguide by burying the photowaveguide in a substrate surface layer when forming the photowaveguide in the substrate as a photosemiconductor element, forming an etched recess for engaging the laser with the end of the photowaveguide, burying the laser and coupling it with the photowaveguide. CONSTITUTION:Titanium is diffused in the surface layer of a substrate 12 made of lithium niobate to form a photowaveguide 11, an etched recess 14 is opened by etching in the substrate 12, and electrode wirings 18 are laid on the bottom. At this time, the size of the recess 17 is formed in the same as that of a semi conductor laser 13 of a stripe 15, and the electrode 15 of the stripe 15 side is disposed at the downside and buried in the recess 17. Thereafter, a driver IC element 19 formed on the temporarily extended line of the photowaveguide 11 is connected with the laser 13 by electrode wirings 18 as a photo semiconductor device. Thus, the photowaveguide 11 and the laser 13 are positioned only by deciding the etching accuracy of the recess 17 to optically couple them and to improve the productivity. |
| 公开日期 | 1986-12-17 |
| 申请日期 | 1985-06-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76492]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOSHIBA CORP |
| 推荐引用方式 GB/T 7714 | ITO MASATAKA,AKUMI TAKEHIKO. Photosemiconductor device. JP1986287264A. 1986-12-17. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。