Semiconductor laser element
文献类型：专利
| 作者 | KURIHARA HARUKI; FURUKAWA CHISATO; HOSOYA TOSHIAKI |
| 发表日期 | 1989-11-27 |
| 专利号 | JP1989293684A |
| 著作权人 | TOSHIBA CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element |
| 英文摘要 | PURPOSE:To obtain an excellent far field pattern by a method wherein a width of two auxiliary grooves is increased continuously as the grooves advance from a boundary between the neighborhood of end faces of a resonator and the central part of the resonator toward the end face of the resonator in order to make a bend of an active layer gentle. CONSTITUTION:A current-blocking layer 2 composed of n-type GaAs is formed on a p-type GaAs substrate 1 by liquid epitaxial growth; after that, a main groove 11 and two auxiliary grooves 12, 13 are formed by etching. A width of the auxiliary grooves 12, 13 is increased continuously as the grooves approach end faces of a resonator from a boundary at the central part of the resonator. Then, a P-type clad layer 3, a p-type active layer 4, an n-type clad layer 5 and an n-type ohmic contact layer 6 are formed one after another. Then, metal electrode layers 7, 8 are formed; after that, this assembly is cut to be chip- shaped; a laser element is obtained. By this setup, a bend of the active layer in a longitudinal direction of the resonator becomes gentle; a far field pattern can be made good. |
| 公开日期 | 1989-11-27 |
| 申请日期 | 1988-05-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76495]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOSHIBA CORP |
| 推荐引用方式 GB/T 7714 | KURIHARA HARUKI,FURUKAWA CHISATO,HOSOYA TOSHIAKI. Semiconductor laser element. JP1989293684A. 1989-11-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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