Manufacture of semiconductor light emitting device
文献类型：专利
| 作者 | ISSHIKI KUNIHIKO |
| 发表日期 | 1992-12-25 |
| 专利号 | JP1992373182A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor light emitting device |
| 英文摘要 | PURPOSE:To form a current construction section which is coincident with the bent section of an active layer through a relatively simple process which does not require any alignment. CONSTITUTION:After a doped oxide 11 is applied to the surface of an n-type cap layer 5 provided with a groove formed coincidentally with the bent shape of an active layer 3 and the oxide 11 is removed so as to leave the oxide only in the groove of the layer 5, a current flowing route is formed by partially inverting the type of conductivity of a cap layer 3 to type (p) by diffusing impurities from the oxide 11 into the cap layer 4 so that the impurities can reach a p-type clad layer 4. |
| 公开日期 | 1992-12-25 |
| 申请日期 | 1991-06-21 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76498]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | ISSHIKI KUNIHIKO. Manufacture of semiconductor light emitting device. JP1992373182A. 1992-12-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。