Liquid phase epitaxy method
文献类型：专利
| 作者 | SUGIMOTO YOSHIMASA |
| 发表日期 | 1988-06-08 |
| 专利号 | JP1988136515A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Liquid phase epitaxy method |
| 英文摘要 | PURPOSE:To improve the control of a thin film and the quality of a crystal by supplying a current to a first growing solution to collapse thermal stability thereby to grow a first thin film layer, then moving a grown substrate under a second growing solution thermally stabilized in a saturated state, then growing a second thin film layer by the similar method, and repeating the above- mentioned process. repeating the above-mentioned process. CONSTITUTION:A grown substrate 2 disposed on a slider 1 is first moved underneath a thermally stable InP growing solution 3. After the movement, a certain time is elapsed to be thermally stable, a current is supplied to a heater wire 5 to collapse the thermal stability, thereby obtaining a layer of desired thickness. Then, the substrate 2 is moved underneath a thermally stable InGaAs growing solution 4. After it is thermally stabilized, a current is supplied to a heater wire 6 to grow the InGaAs layer in a desired thickness. Thereafter, these steps are repeated to continuously grow a multilayered thin film layer. Thus, a crystal having excellent thin film controllability and high quality can be grown. |
| 公开日期 | 1988-06-08 |
| 申请日期 | 1986-11-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76500]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | SUGIMOTO YOSHIMASA. Liquid phase epitaxy method. JP1988136515A. 1988-06-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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