Semiconductor laser element
文献类型：专利
| 作者 | HANEDA MAKOTO; SEKO ICHIRO; KARITA HIDETAKA |
| 发表日期 | 1986-08-29 |
| 专利号 | JP1986194886A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element |
| 英文摘要 | PURPOSE:To reduce leakage current by a method wherein a clad layer of a BH-type semiconductor laser is element connected electrically with a buried layer thereof through an anode electrode. CONSTITUTION:A buffer layer 2 constituted of an n type semiconductor is formed on an n type semiconductor substrate 1, and thereon a strip active layer 3, which emits laser light from an edge face, is formed. A clad layer 4 constituted of a p-type semiconductor is formed on the active layer 3, and at both sides thereof blocking layer 6 constituted of a p-type semiconductor is formed. Additionally, a buried layer 7 constituted of an n-type semiconductor and an ohmic contact layer 12 getting to the clad layer 4 in the midst of thickness are formed. A part of an electrode 10 provided on the ohmic contact layer 12 is subjected to contact with the buried layer 7. |
| 公开日期 | 1986-08-29 |
| 申请日期 | 1985-02-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76506]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | HANEDA MAKOTO,SEKO ICHIRO,KARITA HIDETAKA. Semiconductor laser element. JP1986194886A. 1986-08-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。