Semiconductor laser
文献类型：专利
| 作者 | FUJII HIROAKI |
| 发表日期 | 1992-09-08 |
| 专利号 | JP1992252089A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To perform high output, high reliability operation by a method wherein the width of the top of a mesa is wider than the bottom of the mesa, and the forbidden band width of a well layer having a quantum well structure for constituting an active layer near the end of a laser resonator is larger than that of a well layer having a quantum well structure for constituting an active layer at the center of a laser. CONSTITUTION:In order to increase the forbidden band width of a well layer having a quantum well structure near the end of a laser resonator larger than that of a well layer having a quantum well structure at the center of a semiconductor laser in the laser, an active region 250 is covered with a diffusion mask, and Zn in selectively diffused 220 into window regions 260, 270 near the end of the resonator to form window regions. A cap layer 160, a GaInP layer 150, a clad layer 130 are removed by selectively etching, and a mesa structure is formed. In order to narrow a stripe, the position of the mesa is so selected that the width of the top of the mesa is larger than that of the bottom of the mesa. |
| 公开日期 | 1992-09-08 |
| 申请日期 | 1991-01-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76508]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | FUJII HIROAKI. Semiconductor laser. JP1992252089A. 1992-09-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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