Semiconductor laser
文献类型：专利
| 作者 | SHIMIZU AKIRA; HARA TOSHITAMI |
| 发表日期 | 1987-12-07 |
| 专利号 | JP1987281388A |
| 著作权人 | CANON INC |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To manufacture a semiconductor laser with compound resonators easily in high efficiency by a method wherein a waveguide forming part is formed of multiple resonators mutually interfering with an active layer. CONSTITUTION:The surface of a layer 8, excluding electrode parts, is covered with an insulating film. A part of cap layers 6 and a clad layer 5, excluding two ridge parts a, b, is etched so that these ridge parts a, b may be formed into a waveguide structure to close light in a surface in parallel with an active layer 1 therein. Furthermore, the ridge parts a, b are provided in series in the light emitting direction to be isolated from each other by the distance d corresponding to an interference part 8 respectively forming into resonators on the active layer When current is supplied between the other electrode 2 and the electrodes 7, the resonators formed of the ridge parts a, b start laser oscillation so that the light excited by respective resonators may intensively interfere with each other to transmit laser beams with stable vertical mode from the active layer |
| 公开日期 | 1987-12-07 |
| 申请日期 | 1986-05-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76510]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | CANON INC |
| 推荐引用方式 GB/T 7714 | SHIMIZU AKIRA,HARA TOSHITAMI. Semiconductor laser. JP1987281388A. 1987-12-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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