半導体レ-ザ装置
文献类型：专利
| 作者 | 魚見 和久; 茅根 直樹; ▲吉▼沢 みすず; 中塚 慎一; 梶村 俊 |
| 发表日期 | 1996-04-30 |
| 专利号 | JP2515729B2 |
| 著作权人 | 株式会社日立製作所 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レ-ザ装置 |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser having high output with one emitting beam and high reliability by providing different regions of a half number of laser emitting stripes at least one position. CONSTITUTION:An N-type Ga0.5Al0.5As clad layer 2, an undoped Ga0.86Al0.14As active layer 3, a P-type Ga0.5Al0.5As clad layer 4, an N-type GaAs current narrowing layer 5 are sequentially formed by a MOCVD method on an N-type GaAs substrate crystal The layer 5 is completely removed by photoetching step, four groove stripes of 4mum of width for exposing the surface of the layer 4 are formed near both ends of the laser, and two groove stripes are formed at the center of the laser. Then, a P-type Ga0.5Al0.5As clad layer 6, and a P-type GaAs cap layer 7 are formed by MOCVD method, a P-type electrode 8 and an N-type electrode 9 are formed, and a laser element of approx. 300mum of resonator is obtained by a cleaving method. Thus, a phased array laser having low aberration and high output of refractive index waveguide type can be realized. |
| 公开日期 | 1996-07-10 |
| 申请日期 | 1985-09-04 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76527]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 株式会社日立製作所 |
| 推荐引用方式 GB/T 7714 | 魚見 和久,茅根 直樹,▲吉▼沢 みすず,等. 半導体レ-ザ装置. JP2515729B2. 1996-04-30. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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