Semiconductor laser device
文献类型：专利
| 作者 | FUJISAKI YOSHIHISA; MORI TAKAO; HIRAO MOTONAO; KAJIMURA TAKASHI; NAKAMURA MICHIHARU |
| 发表日期 | 1985-04-08 |
| 专利号 | JP1985060792A |
| 著作权人 | HITACHI SEISAKUSHO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To extremely reduce the variability of element characteristics by reducing the variability of the width of an active layer with forming the low electric resistance, the low oscillation thereshold value and the good shape of beam. CONSTITUTION:A clad layer 5, an active layer 10 of a stripe region and a second clad layer 9 are formed on a crystal of a substrate 6 in the above order. At this time, the active layer 10 or the vicinity including said layer 10 is held by the crystal plane making an angle of 90 deg.+ or -10 deg. with a main surface of the active layer 10 from the both sides. The upper surface of the clad layer 9 is formed more widely than the active layer 10. Consequently, the variability of the active layer 10 in a wafer becomes + or -0.1mum or less and the yield of elements fabrication is increased. |
| 公开日期 | 1985-04-08 |
| 申请日期 | 1983-09-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76532]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI SEISAKUSHO KK |
| 推荐引用方式 GB/T 7714 | FUJISAKI YOSHIHISA,MORI TAKAO,HIRAO MOTONAO,et al. Semiconductor laser device. JP1985060792A. 1985-04-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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