Semiconductor laser
文献类型：专利
| 作者 | TOKUDA YASUKI; KANEMOTO KYOZO; ABE YUJI; TSUKADA NORIAKI |
| 发表日期 | 1990-04-16 |
| 专利号 | JP1990102592A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To enable a semiconductor laser to oscillate in a Bragg frequency by a method wherein an active layer is composed of linelike materials, whose band gaps are different from each other and which are periodically provided in parallel, the periodic space is specified, and the lengthwise direction of the linelike materials is made to intersect with a direction in which light travels. CONSTITUTION:A semiconductor laser is composed of an active layer 21 provided between two clad layers 22 and 23 and holes and electrons are injected into the active layer 21 to enable it to oscillate laser rays, where the active layer 21 is composed of two or more materials periodically provided in lines in parallel, and the periodic space X, as shown in a formula I, can be obtained by dividing integer times the half of the oscillating wavelength by an refractive index. In the formula I, m represents an integer, lambdaB denotes the wavelength of oscillating laser rays, and n is a refractive index. And, the lengthwise direction of thin lines is made to intersect with a propagation direction of light. By this setup, a semiconductor laser of this design can oscillate laser rays of a single wavelength of a Bragg wavelength. |
| 公开日期 | 1990-04-16 |
| 申请日期 | 1988-10-12 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76554]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | TOKUDA YASUKI,KANEMOTO KYOZO,ABE YUJI,et al. Semiconductor laser. JP1990102592A. 1990-04-16. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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