Semiconductor laser device
文献类型：专利
| 作者 | MURAKAMI TAKASHI; HIRONAKA MISAO; MIHASHI YUTAKA; OOTAKI KANAME; SOGOU TOSHIO |
| 发表日期 | 1985-03-28 |
| 专利号 | JP1985054489A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To prevent the damage of an end of a semiconductor laser device and to stabilize the laser mode by opening a V-shaped groove at the center of a current narrowing layer and rectangular grooves at both sides of the V-shaped groove when laminating and forming a current narrowing layer, a lower clad layer, an active layer, and an upper clad layer on a semiconductor substrate which has {100} plane, and increasing the band gap of the active layer at both ends. CONSTITUTION:In order to readily understood the structure of a semiconductor laser device, the inner portion is displaced with respect to the vicinity of the resonation surface in a drawing. When a current narrowing layer 2 is first grown on a GaAs substrate 1 having {100} plane to form a stripe in direction, V-groove formed in {111} plane is formed near the resonator surface and grooves of rectangular sections presented in {100} plane are formed at both sides of the V-groove by photocomposing technique. Then, a GaAlAs lower clad layer 3a, an active layer 4, an upper clad layer 3b having flat front surface, and a contacting layer 5 are laminated and liquid phase epitaxially grown as the normal way. |
| 公开日期 | 1985-03-28 |
| 申请日期 | 1983-09-05 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76556]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | MURAKAMI TAKASHI,HIRONAKA MISAO,MIHASHI YUTAKA,et al. Semiconductor laser device. JP1985054489A. 1985-03-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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