Semiconductor laser device
文献类型：专利
| 作者 | EGUCHI KAZUHIRO; OBA YASUO; KUSHIBE MITSUHIRO; FUNAMIZU MASAHISA |
| 发表日期 | 1989-08-28 |
| 专利号 | JP1989214191A |
| 著作权人 | TOSHIBA CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To enable single mode oscillation to be made and to obtain an improved element characteristics to be obtained by adding a rare-earth element to the clad layer, optic guide layer, and one of side embedding layers. CONSTITUTION:An n-type InP clad layer 12 which is also used for buffer layer is formed on an n-type InP substrate 11 and a mesa stripe wherein a GaInAsP active layer 15, a GaInAsP optic guide layer 14, and a p-type InP clad layer 15 are laminated is formed on it. A high-resistance InP embedding layer 16 is embedded at both sides of mesa and a P-type GaInAsP contact layer 17 is formed on the uppermost layers 15 and 16. An n-side electrode 18 and a P-type electrode 19 are provided on the lower surface of a substrate 11 and on a layer 17, respectively. Then, a rare earth element Er is added to a guide layer 14. |
| 公开日期 | 1989-08-28 |
| 申请日期 | 1988-02-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76558]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOSHIBA CORP |
| 推荐引用方式 GB/T 7714 | EGUCHI KAZUHIRO,OBA YASUO,KUSHIBE MITSUHIRO,et al. Semiconductor laser device. JP1989214191A. 1989-08-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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