Semiconductor laser element
文献类型：专利
| 作者 | KOBAYASHI UICHIRO |
| 发表日期 | 1990-08-15 |
| 专利号 | JP1990205382A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element |
| 英文摘要 | PURPOSE:To increase the life of an operation by specifying the carrier concentrations of a n-type and p-type clad layers for holding an active layer made of GaAlAs to a specific value. CONSTITUTION:A multilayer grown layer 11 is formed in a multilayer grown structure of four layers of a n-type clad layer 4 of GaAlAs formed directly on the main face of a GaAs substrate 3, an active layer 5 of GaAlAs formed on the upper face of the layer 4, a P-type clad layer 6 of GaAlAs formed on the upper face of the layer 6, and a n-type cap layer 7 of GaAs formed on the upper face of the layer 6. The carrier concentrations of the layers 4, 6 for holding the layer 5 therebetween are higher approx. 1-2X10cm than that of conventional one of approx. 4-6X10cm. Thus, its life can be improved. |
| 公开日期 | 1990-08-15 |
| 申请日期 | 1989-02-03 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76566]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | KOBAYASHI UICHIRO. Semiconductor laser element. JP1990205382A. 1990-08-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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