Buried type semiconductor laser
文献类型：专利
| 作者 | SUGAO SHIGEO; KOIZUMI YOSHIHIRO |
| 发表日期 | 1989-07-06 |
| 专利号 | JP1989171288A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Buried type semiconductor laser |
| 英文摘要 | PURPOSE:To reduce a leakage current from a current blocking layer, to decrease a parasitic capacity, to diminish a threshold value and to perform a high speed operation of a buried type semiconductor laser in which semiconductor type of a semiconductor layer is of semi-insulation on the right and left sides of an active layer by forming the semiconductor substrate of the laser in a P-type conductivity. CONSTITUTION:An undoped InGaAsP layer having approx. 0.95eV of forbidden band width is employed as an active layer 12, a Zinc-doped InP layer is employed as a buffer layer 11, a sulfur-doped InP layer is employed as a clad layer 13, a sulfur-doped InGaAsP layer is employed as a contact layer 14, and an iron-doped layer is employed as a semi-insulating semiconductor layer 18. A zinc-doped P-type InP substrate is employed as a semiconductor substrate 10a. An n-type low resistance semiconductor layer 19 forms a p-n junction with the layer 1 Since this junction is formed of the InP layer having larger forbidden band width than that of the p-n junction in a double hetero structure, an injection current flows only in the active layer, its leakage current is reduced, and a low threshold of approx. 10mA is obtained with good reproducibility. Its parasitic capacity is reduced by the layer 18, and a modulation band of 10GHz or more is obtained. |
| 公开日期 | 1989-07-06 |
| 申请日期 | 1987-12-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76575]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | SUGAO SHIGEO,KOIZUMI YOSHIHIRO. Buried type semiconductor laser. JP1989171288A. 1989-07-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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