Semiconductor light emitting device and manufacture thereof
文献类型：专利
| 作者 | ONAKA SEIJI; TSUJII HIRAAKI; SASAI YOICHI; SHIBATA ATSUSHI |
| 发表日期 | 1988-09-22 |
| 专利号 | JP1988228790A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting device and manufacture thereof |
| 英文摘要 | PURPOSE:To preclude a heat treatment at a high temperature and to form a reflecting surface with good reproducibility by forming resonator surfaces parallel with the (011) face by a dry etching method, and forming a reflecting surface parallel with the (111) face by an anisotropical etching. CONSTITUTION:A pair of resonator surfaces of a semiconductor laser are formed by the side faces of a groove which was formed by etching a contact layer 6, a second clad layer 5, an optical guide layer 4, an active layer 3 and a first clad layer 2 till reaching a semiconductor substrate 1, using a dry etching method, with a Ti film 8 as a mask, and a reflecting surface for upwardly reflecting the emitted light from a resonator surface is formed by a (111)A plane which was exposed by an etching with an etchant containing bromine after removing the Ti film 8 and a Si3N4 film 7 and selectively forming a SiO2 film 9. The light transmitted through the reflecting surface is absorbed in the active layer 3 positioned behind the reflecting surface and is detected at in electrode 13 as an optical current, whereby the optical output of the emitted light is monitored. |
| 公开日期 | 1988-09-22 |
| 申请日期 | 1987-03-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76589]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | ONAKA SEIJI,TSUJII HIRAAKI,SASAI YOICHI,et al. Semiconductor light emitting device and manufacture thereof. JP1988228790A. 1988-09-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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