Manufacture of semiconductor laser device
文献类型：专利
| 作者 | YOSHIKAWA AKIO; KAZUMURA MASARU |
| 发表日期 | 1985-12-12 |
| 专利号 | JP1985251687A |
| 著作权人 | MATSUSHITA DENKI SANGYO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser device |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser device, which oscillates at a single transverse mode and operates at a low threshold, by removing one part of a thin-film layer, which is formed onto one conduction type semiconductor substrate with a stepped section and displays a conduction type reverse to the substrate, and shaping a multilayer thin-film containing double hetero-structure onto the thin-film layer through a liquid-phase epitaxial method. CONSTITUTION:A stepped section is formed in parallel in the direction through photolithography onto the 100 face of a P type GaAs substrate 10. An N type GaAs current stopping layer 11 (carrier concentration: approximately 1X10cm) is grown onto the stepped section in approximately 1mum through a MOCVD method. A photo-resist is applied, a photo-resist film 12 is left onto a surface in the upper section of the stepped section, and a surface shown in a broken line 20 is exposed through etching. The photo-resist film 12 is removed, the surface of the substrate is purified, a crystal is grown through a LPE method, a P type Ga1-xAlxAs clad layer 13, a Ga1-yAlyAs active layer 14, an N type Ga1-xAlxAs clad layer 15 and an N type GaAs layer 16 are shaped onto the surface shown in the broken line 20, and a grown surface is flattened. |
| 公开日期 | 1985-12-12 |
| 申请日期 | 1984-05-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76591]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA DENKI SANGYO KK |
| 推荐引用方式 GB/T 7714 | YOSHIKAWA AKIO,KAZUMURA MASARU. Manufacture of semiconductor laser device. JP1985251687A. 1985-12-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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