Semiconductor laser
文献类型：专利
| 作者 | TOYODA YUKIO |
| 发表日期 | 1988-02-05 |
| 专利号 | JP1988028092A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To facilitale controlling a vertical mode to be a perfect single mode and a lateral mode to be a circular and improve a working efficiency significant ly by coupling a plurality of waveguides with each other at their emission edge planes. CONSTITUTION:A plurality of waveguides 1 and 2 which are formed in active layers or in the parts adjacent to active layers and have different lengths are provided. To interconnect the waveguides, the same material as the waveguides 1 and 2 is provided between the waveguide 1 and 2 at either one of emission edge planes. With this constitution, the oscillated light distributions of both the waveguides 1 and 2 are mutually superposed and an X-direction electric field intensity distribution is made to be singular at the emission edge planes. Moreover, by making the space W1 between the waveguides about the same as the width of the waveguide, a circular pattern can be realized. |
| 公开日期 | 1988-02-05 |
| 申请日期 | 1986-07-21 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76606]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | TOYODA YUKIO. Semiconductor laser. JP1988028092A. 1988-02-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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