Semiconductor laser element
文献类型：专利
| 作者 | HANEDA MAKOTO; SAKAKI SHIGEO |
| 发表日期 | 1983-04-27 |
| 专利号 | JP1983070590A |
| 著作权人 | HITACHI SEISAKUSHO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element |
| 英文摘要 | PURPOSE:To allow to obtain the excellent luminous characteristic in a low power, by porviding a V groove having a V-shaped section along an active layer in the center of the main surface of a substrate and filling this V groove with a clad layer with the same conductive type as the substrate. CONSTITUTION:On the n type substrate 1, the V groove 13 having a V-shaped section along the longitudinal direction in the center of the main surface thereof. The n type clad layer 2 is formed on this substrate, and the V groove 13 is filled with this layer 2. On the other hand, an active layer 3 and a p type clad layer 4 are superposed in the center of the layer 2, and a p type blocking layer 7 and an n type buried layer 6 are formed in superposition on the both sides of these layers. In this constitution, since the active layer 3 is blocked with an n type and a p type layers 2, 4, and the both sides thereof are blocked with a pair of n type layers 6 resulting in a buried hetero structure, the threshold current decreases. As the result, the impressing power and the rate of temperature increase are small. Besides, since the refractive index of the layer 3 in a width direction becomes large at the center and small at the both sides, the light of the both sides is enclosed, and accordingly, the transversal mode spectrum is stabilized. |
| 公开日期 | 1983-04-27 |
| 申请日期 | 1981-10-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76609]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI SEISAKUSHO KK |
| 推荐引用方式 GB/T 7714 | HANEDA MAKOTO,SAKAKI SHIGEO. Semiconductor laser element. JP1983070590A. 1983-04-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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