Manufacture of optical integrated circuit
文献类型：专利
| 作者 | ISHINO MASATO; SASAI YOICHI; KUBO MINORU |
| 发表日期 | 1988-02-05 |
| 专利号 | JP1988028093A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of optical integrated circuit |
| 英文摘要 | PURPOSE:To obtain an optical integrated circuit which is free from the influence of thermal damage before 2nd epitaxial growth and has excellent LD characteristics by a method wherein a protective layer is formed on an intermediate layer by 1st epitaxial growth and, after the protective layer, the intermediate layer and an InGaAsP active layer in an optical guide part are removed, the protective layer is selectively melted back with InP melt by the 2nd liquid phase epitaxial growth. CONSTITUTION:After a Te-doped ntype InP buffer layer 2, an InGaAsP active layer 3 with lambdag=3mum and a p-type InP intermediate layer 9 are epitaxially grown on an S-doped ntype InP substrate 1, an InGaAs protective layer 10 which 0.1mum thickness and with lambdag=5mum or longer is further grown on them. Then a light emitting part A is masked, and the InGaAs protective layer 10, the InP intermediate layer 9 and the InGaAsP active layer 3 are selectively etched. As the InGaAsP active layer 3 is covered with the InGaAs protective layer 10, the degradation of the light emission efficiency of a semiconductor laser caused by introducing defects into the boundary of the active layer at the time of high temperature soaking in 2nd liquid phase epitaxial growth can be avoided. |
| 公开日期 | 1988-02-05 |
| 申请日期 | 1986-07-22 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76611]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | ISHINO MASATO,SASAI YOICHI,KUBO MINORU. Manufacture of optical integrated circuit. JP1988028093A. 1988-02-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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