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文献类型：专利
| 作者 | TAMURA AKYOSHI; FUJITA TOSHIHIRO; KONUMA TAKESHI |
| 发表日期 | 1988-09-01 |
| 专利号 | JP1988043906B2 |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To oscillate selected two or more different wavelengths by selecting wavelength of light excited or returned from external circuit into the wavelength having energy value corresponding to the forbidden band of active layer. CONSTITUTION:The n type layers 12, 13, 14 and p type layer 15 are grown in succession on an n type substrate semiconductor layer 1 The layers 12, 14 are active layers while the layers 11, 13, 15 are clad layers. The forbidden bands of layers 11-15 sre considered respectively as E1, E2, E3, E4, E5. In this case, E1, E3, E5 are larger than any of E2 and E4 with respect to the relation-ship of forbidden band width of each half layer. When a forward voltage is applied to the p-n junction in such a semiconductor laser of such structure, light emission having a peak value in the two wavelengths region can be found with the layers 12, 14 considered as the recoupling region of the electrons and holes. When the light in the wavelength corresponding to an energy E2 enters from the layer 11, laser oscillation occurs with the layer 12 operated as the active layer and the layers 11, 13 as the clad layers. In the same way, when the light in the wavelength corresponding to energy E4 enters, laser oscillation occurs with the layer 14 operated as the active layer. |
| 公开日期 | 1988-09-01 |
| 申请日期 | 1982-02-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76619]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | TAMURA AKYOSHI,FUJITA TOSHIHIRO,KONUMA TAKESHI. -. JP1988043906B2. 1988-09-01. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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