Semiconductor laser device
文献类型：专利
| 作者 | SHIMA AKIHIRO |
| 发表日期 | 1991-04-03 |
| 专利号 | JP1991078285A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To obtain an efficient semiconductor laser device without causing end face deterioration by positioning the active region above a current narrowing trench closer to the substrate side than the active layer at an element end, and positioning one part of a lower clad layer at the end face part in the light emitting direction of the active region. CONSTITUTION:The first lower clad layer 2 and a current checking layer 3 are crystal-grown in order on a substrate Next, only at the center of an element excluding an element end, a current narrowing layer 46, which pierces the current checking layer 3, is formed in the direction of the resonator of a laser. The second lower clad layer 5, an active layer 6, an upper clad layer 7, and an ohmic contact layer 8 are crystal-grown in order on such a wafer. The active layer 6b at the end face part is also positioned closer to the ohmic contact layer 8 side than the active region 6a above a current narrowing trench 4b. At the end face in the light emitting direction of the active region 6a where gain is obtained, one part of the second lower clad layer 5 having wide forbidden band width remains, and a window region is formed. |
| 公开日期 | 1991-04-03 |
| 申请日期 | 1989-08-21 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76628]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | SHIMA AKIHIRO. Semiconductor laser device. JP1991078285A. 1991-04-03. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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