Photo-semiconductor device
文献类型：专利
| 作者 | TSUJI SHINJI; SAKANO SHINJI; MATSUMURA HIROYOSHI; HIRAO MOTONAO; OISHI AKIO; INOUE HIROAKI |
| 发表日期 | 1988-05-26 |
| 专利号 | JP1988122188A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Photo-semiconductor device |
| 英文摘要 | PURPOSE:To obtain a photo-semiconductor device whose coupling efficiency is high, whose wavelength selectivity is strong and which is constructed as an integrated device capable of realizing a narrow spectral band (a narrow width) by a method wherein a DFB laser having strong wavelength selectivity is coupled to a grating reflection part on the same substrate through a light guide. CONSTITUTION:As shown in the figure, a DFB semiconductor laser is formed on the left, a light guide part is installed in the central part and a grating part is formed on the right. Then, after an n-type InGaAsP light guide layer 2, an InGaAsP active layer 3, a p-type InP clad layer 4 and a p-type InGaAs layer 5 have been grown on an n-InP substrate 1, grown layers other than the semiconductor laser part are removed by selective etching; after that, an InGaAsP guide layer 6, a p-type InP layer 4 and a p-type InGaAsP cap layer 5 are grown selectively on the parts other than the semiconductor laser part; in addition, the whole assembly is made to be a BH structure. After that, the cap layer and a p-type InP layer located on the light guide are removed. The light generated by the semiconductor laser is guided through the light guide layer 6, is subjected to the strong wavelength selectivity at the grating part, and is returned to the semiconductor laser. |
| 公开日期 | 1988-05-26 |
| 申请日期 | 1986-11-12 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76640]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | TSUJI SHINJI,SAKANO SHINJI,MATSUMURA HIROYOSHI,et al. Photo-semiconductor device. JP1988122188A. 1988-05-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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