Semiconductor laser device
文献类型：专利
| 作者 | TAMURA HIDEO; SAGARA MINORU; KURIHARA HARUKI |
| 发表日期 | 1985-01-09 |
| 专利号 | JP1985003175A |
| 著作权人 | TOSHIBA KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To obtain a laser, which oscillates in, a single lateral mode a lateral spread angle thereof extends over 13 deg. or more and an optical direction of a stripe recessed groove in the direction and bringing the width of the groove to 5-3.0mum when the recessed groove is formed to a GaAs substrate with a plane, a multilayer hetero-junction with a flat active region is shaped on the groove and a laser device is manufactured. CONSTITUTION:An N type GaAs current stopping layer 32, a GaAlAs groove deformation stopping layer 34 and a GaAs layer 36 are laminated on a P type GaAs substrate 30 with a plane and grown in a liquid phase in an epitaxial manner, and a resist 39 having a striped pattern 38 in 5-3.0mum width in the direction is formed through a photolithography method. A recessed groove 40 corresponding to the pattern 38 is bored through reactive ion etching, and a P type GaAlAs clad layer 42, a GaAs active layer 44, an N type GaAlAs clad layer 46 and a P type GaAs contact layer 48 are grown on the whole surface while burying the groove. |
| 公开日期 | 1985-01-09 |
| 申请日期 | 1983-06-21 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76645]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOSHIBA KK |
| 推荐引用方式 GB/T 7714 | TAMURA HIDEO,SAGARA MINORU,KURIHARA HARUKI. Semiconductor laser device. JP1985003175A. 1985-01-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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