Semiconductor laser
文献类型：专利
| 作者 | SHIBUYA TAKAO; ITO KUNIO |
| 发表日期 | 1988-09-07 |
| 专利号 | JP1988215091A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To relax the stress to be applied to both ends of a groove, to inhibit the generation of a dark line in an active layer and to obtain a highly reliable high-output operation by forming a GaAlAs layer having a mixed crystal ratio smaller than that of a first clad layer in the groove. CONSTITUTION:An Al0.30Ga0.70As stress relaxing layer 10 is formed in such a way as to fill a groove. The mixed crystal ratio of Al to As of the layer 10 is made smaller than that of a first clad layer 3. By making the thermal expansion coefficient of the AlGaAs of the layer 10 approach to the thermal expansion coefficient of the GaAs layer, the stress to be applied to both ends of the groove 9 becomes small. An active layer 4 and a second clad layer 5 are formed in order on the clad layer 3. Thereby, the generation of a dark line in the layer 4 is inhibited and a highly reliable high-output operation can be obtained. |
| 公开日期 | 1988-09-07 |
| 申请日期 | 1987-03-04 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76648]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | SHIBUYA TAKAO,ITO KUNIO. Semiconductor laser. JP1988215091A. 1988-09-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。