Semiconductor laser
文献类型：专利
| 作者 | TOYODA YUKIO; OOSHIMA MASAAKI; KINO YUKIHIRO |
| 发表日期 | 1985-07-29 |
| 专利号 | JP1985143684A |
| 著作权人 | MATSUSHITA DENKI SANGYO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To reduce effective reflection factor against approximation mode, to restrain proximity mode and to improve the singleness of longitudinal mode by causing interference effect due to internal reflection. CONSTITUTION:An internal reflection plane due to replacement with a material which has smaller refractive index than that of an active layer or an adjacent waveguide to it is provided. For example, on an N type InP substrate 1, an N-In1-xGaxAsyP1-y layer 2, an N-InP layer 3, a P-InP layer 4, an N-InP layer 5 and a P-In1-x'GaxAsy'P1-y' layer 6 are grown one after another and a stripe type groove is formed. In the groove, an N-InP layer 8, an N-In1-xGaxAsyP1-y (active layer) 9, a P-InP layer 10 and a P-In1-x'Gax'Asy'P1-y' layer 11 are grown one after another and the crescent type active layer 9 is buried. In the region where the groove is not formed, crystal is not grown even by the second growth and the surface of SiO2 remains intact, where an active layer is lacked to become an internal reflection plane. |
| 公开日期 | 1985-07-29 |
| 申请日期 | 1983-12-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/76649]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA DENKI SANGYO KK |
| 推荐引用方式 GB/T 7714 | TOYODA YUKIO,OOSHIMA MASAAKI,KINO YUKIHIRO. Semiconductor laser. JP1985143684A. 1985-07-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。